Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Threshold Voltage
- 4.9V
- Direnç
- 95MOhm
- Kılıf / Paket
- TO-220-5 Full Pack
- Transistor Element Material
- SILICON
- Power Dissipation
- 18W
- Genişlik
- 4.826mm
- Uzunluk
- 10.6172mm
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 150V
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4.9V @ 50μA
- Turn On Delay Time
- 7 ns
- Pin Sayısı
- 5
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Breakdown Voltage
- 150V
- Rds On Max Id Vgs
- 95m Ω @ 5.2A, 10V
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Pozisyonu
- SINGLE
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 810pF @ 25V
- Reach Svhc
- No SVHC
- Kurşunsuz
- Lead Free
- Pulsed Drain Currentmax Idm
- 34A
- Max Power Dissipation
- 18W
- Number Of Elements
- 2
- Recovery Time
- 86 ns
- Transistor Application
- AMPLIFIER
- Parça Durumu
- Active
- Ambalaj
- Tube
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Through Hole
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 5
- Yükseklik
- 9.02mm
- Continuous Drain Current Id
- 8.7A
- Avalanche Energy Rating Eas
- 77 mJ
- Rise Time
- 6.6ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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