IRFHS9351TRPBF

Specifications

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

3.7nC @ 10V

Pin Sayısı

6

Turn On Delay Time

8.3 ns

Vgsth Max Id

2.4V @ 10μA

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

-30V

Rds On Max Id Vgs

170m Ω @ 3.1A, 10V

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Kılıf / Paket

6-VQFN Exposed Pad

JESD-609 Kodu

e3

Threshold Voltage

-1.8V

Seri

HEXFET®

Power Dissipation

1.4W

Rise Time

30ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.17Ohm

Continuous Drain Current Id

2.3A

Terminal Sayısı

6

Fet Type

2 P-Channel (Dual)

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Fet Feature

Logic Level Gate

Turn Off Delay Time

6.3 ns

Element Configuration

Dual

Drain Currentmax Abs Id

5.1A

Fall Time Typ

7.9 ns

Montaj Tipi

Surface Mount

Yayın Yılı

2011

Nem Hassasiyeti (MSL)

1 (Unlimited)

Temel Parça No

IRFHS9351PBF

Nominal Vgs

-1.8 V

Input Capacitance Ciss Max Vds

160pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Additional Feature

HIGH RELIABILITY

Fet Technology

METAL-OXIDE SEMICONDUCTOR