Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Threshold Voltage
- 1.8V
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 8-PowerVDFN
- JESD-609 Kodu
- e3
- Seri
- HEXFET®
- Power Dissipation
- 2.7W
- Vgsth Max Id
- 2.35V @ 25μA
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 30V
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Terminal Kaplaması
- Matte Tin (Sn)
- Turn On Delay Time
- 14 ns
- Pin Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Drain To Source Breakdown Voltage
- 30V
- Rds On Max Id Vgs
- 14.9m Ω @ 10A, 10V
- Case Connection
- DRAIN
- Additional Feature
- HIGH RELIABILITY
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 1165pF @ 10V
- Number Of Elements
- 2
- Max Power Dissipation
- 2.7W
- Pulsed Drain Currentmax Idm
- 116A
- Reach Svhc
- No SVHC
- Kurşunsuz
- Lead Free
- Parça Durumu
- Not For New Designs
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 8
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Rise Time
- 94ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drainsource On Resistancemax
- 0.0149Ohm
- Continuous Drain Current Id
- 11A
- Fall Time Typ
- 33 ns
- Montaj Tipi
- Surface Mount
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