Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 8-PowerVDFN
- Power Dissipation
- 2.3W
- Seri
- HEXFET®
- Gate Charge Qg Max Vgs
- 6.3nC @ 10V
- Terminal Kaplaması
- Matte Tin (Sn)
- Turn On Delay Time
- 3.4 ns
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 100V
- Vgsth Max Id
- 4V @ 10μA
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 100V
- Rds On Max Id Vgs
- 195m Ω @ 2.9A, 10V
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 251pF @ 25V
- Fabrika Tedarik Süresi
- 12 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Case Connection
- DRAIN
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Number Of Elements
- 2
- Max Power Dissipation
- 2.3W
- Pulsed Drain Currentmax Idm
- 14A
- Continuous Drain Current Id
- 2.3A
- Rise Time
- 4.7ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drainsource On Resistancemax
- 0.195Ohm
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 8
- Montaj
- Surface Mount
- Turn Off Delay Time
- 5.2 ns
- Drain Currentmax Abs Id
- 3.4A
- Element Configuration
- Dual
- Fet Feature
- Standard
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