IRFHM792TR2PBF

Specifications

Drain To Source Voltage Vdss

100V

Vgsth Max Id

4V @ 10μA

Power Max

2.3W

Gate Charge Qg Max Vgs

6.3nC @ 10V

Pin Sayısı

8

Current Continuous Drain Id25

2.3A

RoHS Durumu

RoHS Compliant

Rds On Max

195 mΩ

Maks. Çalışma Sıcaklığı

150°C

Rds On Max Id Vgs

195mOhm @ 2.9A, 10V

Drain To Source Breakdown Voltage

100V

Threshold Voltage

3V

Drain To Source Resistance

195mOhm

Tedarikçi Cihaz Paketi

8-PQFN (3.3x3.3), Power33

Kılıf / Paket

8-PowerVDFN

Power Dissipation

2.3W

Seri

HEXFET®

Gate To Source Voltage Vgs

20V

Fet Type

2 N-Channel (Dual)

Montaj

Surface Mount

Continuous Drain Current Id

2.3A

Rise Time

4.7ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Montaj Tipi

Surface Mount

Nominal Vgs

3 V

Temel Parça No

IRFHM792PBF

Fall Time Typ

2.6 ns

Turn Off Delay Time

5.2 ns

Element Configuration

Dual

Fet Feature

Standard

Input Capacitance Ciss Max Vds

251pF @ 25V

Reach Svhc

No SVHC

Recovery Time

23 ns

Max Power Dissipation

2.3W

Min. Çalışma Sıcaklığı

-55°C

Ambalaj

Cut Tape (CT)

Parça Durumu

Obsolete

Input Capacitance

251pF