Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 18-PowerVQFN
- Jesd30 Code
- R-PQFP-N6
- Direnç
- 8.6MOhm
- Qualification Status
- Not Qualified
- Gate Charge Qg Max Vgs
- 12nC @ 4.5V
- Vgsth Max Id
- 2.35V @ 25μA
- Power Max
- 2.4W 3.4W
- Uzunluk
- 5.9944mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Pozisyonu
- QUAD
- Parça Durumu
- Not For New Designs
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Max Power Dissipation
- 3.4W
- Kurşunsuz
- Lead Free
- Fet Type
- 2 N-Channel (Dual)
- Nominal Vgs
- 2.35 V
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 2 (1 Year)
- Yayın Yılı
- 2011
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Seri
- HEXFET®
- Power Dissipation
- 2.4W
- Genişlik
- 5mm
- Pin Sayısı
- 18
- Terminal Kaplaması
- Matte Tin (Sn)
- ECCN Kodu
- EAR99
- Terminal Formu
- NO LEAD
- Operating Mode
- ENHANCEMENT MODE
- Rds On Max Id Vgs
- 8.6m Ω @ 12A, 10V
- Drain To Source Breakdown Voltage
- 30V
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 13A 28A
- Fabrika Tedarik Süresi
- 39 Weeks
- Input Capacitance Ciss Max Vds
- 1060pF @ 15V
- Additional Feature
- HIGH RELIABILITY
- Case Connection
- DRAIN SOURCE
- Pulsed Drain Currentmax Idm
- 100A
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