IRFH7911TR2PBF

Specifications

Input Capacitance Ciss Max Vds

1060pF @ 15V

Min. Çalışma Sıcaklığı

-55°C

Parça Durumu

Obsolete

Ambalaj

Cut Tape (CT)

Input Capacitance

1.06nF

Reach Svhc

No SVHC

Max Power Dissipation

3.4W

Number Of Elements

2

Recovery Time

20 ns

Continuous Drain Current Id

28A

Yükseklik

939.8μm

Rise Time

35ns

Gate To Source Voltage Vgs

20V

Fet Type

2 N-Channel (Dual)

Montaj

Surface Mount

Turn Off Delay Time

28 ns

Element Configuration

Dual

Fet Feature

Logic Level Gate

Montaj Tipi

Surface Mount

Yayın Yılı

2012

Nem Hassasiyeti (MSL)

2 (1 Year)

Temel Parça No

IRFH7911PBF

Nominal Vgs

2.35 V

Fall Time Typ

14 ns

Tedarikçi Cihaz Paketi

PQFN (5x6)

Kılıf / Paket

18-PowerVQFN

Threshold Voltage

2.35V

Drain To Source Resistance

3mOhm

Genişlik

5mm

Power Dissipation

3.4W

Seri

HEXFET®

Gate Charge Qg Max Vgs

12nC @ 4.5V

Pin Sayısı

18

Drain To Source Voltage Vdss

30V

Uzunluk

5.9944mm

Vgsth Max Id

2.35V @ 25μA

Power Max

2.4W 3.4W

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

8.6mOhm @ 12A, 10V