Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Ambalaj
- Tube
- Seri
- HEXFET®
- Vgsth Max Id
- 1V @ 250μA
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge Qg Max Vgs
- 14nC @ 10V
- Turn Off Delay Time
- 13 ns
- Direnç
- 100mOhm
- Drain To Source Breakdown Voltage
- 30V
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 100m Ω @ 2.2A, 10V
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 16A
- Fall Time Typ
- 3 ns
- Temel Parça No
- IRF9956PBF
- Genişlik
- 4.05mm
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Fet Type
- 2 N-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 2W
- Parça Durumu
- Discontinued
- Transistor Element Material
- SILICON
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2003
- Nominal Vgs
- 1 V
- Threshold Voltage
- 1V
- Akım Değeri
- 3.5A
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 8
- Voltage Rated Dc
- 30V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 190pF @ 15V
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Rise Time
- 8.8ns
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 3.5A
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