Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Sayısı
- 8
- Voltage Rated Dc
- -30V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge Qg Max Vgs
- 12nC @ 10V
- Turn Off Delay Time
- 20 ns
- Gate To Source Voltage Vgs
- 20V
- Direnç
- 250mOhm
- Input Capacitance Ciss Max Vds
- 190pF @ 15V
- Terminal Formu
- GULL WING
- Drain To Source Breakdown Voltage
- -30V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2004
- Seri
- HEXFET®
- Akım Değeri
- -2.3A
- Vgsth Max Id
- 1V @ 250μA
- Drain To Source Voltage Vdss
- 30V
- Rds On Max Id Vgs
- 250m Ω @ 1A, 10V
- Rise Time
- 14ns
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 2.3A
- Pulsed Drain Currentmax Idm
- 10A
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Temel Parça No
- IRF9953PBF
- Genişlik
- 3.9878mm
- Kurşunsuz
- Contains Lead, Lead Free
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation
- 2W
- Fabrika Tedarik Süresi
- 12 Weeks
- Fet Feature
- Standard
- Fall Time Typ
- 6.9 ns
- Additional Feature
- HIGH RELIABILITY
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
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