Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 4.9784mm
- Yükseklik
- 1.4986mm
- Avalanche Energy Rating Eas
- 44 mJ
- Power Dissipation
- 2W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature
- HIGH RELIABILITY
- Fet Feature
- Logic Level Gate
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 3.5A
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Rise Time
- 14ns
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 190pF @ 15V
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 8
- Threshold Voltage
- 1V
- Akım Değeri
- 3.5A
- Yayın Yılı
- 2004
- Nominal Vgs
- 1 V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reach Svhc
- No SVHC
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
- Fet Type
- N and P-Channel
- ECCN Kodu
- EAR99
- Genişlik
- 3.9878mm
- Kurşunsuz
- Contains Lead, Lead Free
- Temel Parça No
- IRF9952PBF
- Fabrika Tedarik Süresi
- 12 Weeks
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Pulsed Drain Currentmax Idm
- 16A
- Current Continuous Drain Id25
- 3.5A 2.3A
- Rds On Max Id Vgs
- 100m Ω @ 2.2A, 10V
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
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