Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 4.9784mm
- Yükseklik
- 1.4986mm
- Avalanche Energy Rating Eas
- 44 mJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation
- 2W
- Fet Feature
- Logic Level Gate
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Continuous Drain Current Id
- 3.5A
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 14ns
- Montaj
- Surface Mount
- Terminal Formu
- GULL WING
- Input Capacitance Ciss Max Vds
- 190pF @ 15V
- Gate To Source Voltage Vgs
- 20V
- Terminal Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nominal Vgs
- 1 V
- Yayın Yılı
- 2004
- Threshold Voltage
- 1V
- Akım Değeri
- 3.5A
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Parça Durumu
- Discontinued
- Max Power Dissipation
- 2W
- Fet Type
- N and P-Channel
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Genişlik
- 4.05mm
- ECCN Kodu
- EAR99
- Temel Parça No
- IRF9952PBF
- Fall Time Typ
- 6.9 ns
- Pulsed Drain Currentmax Idm
- 16A
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 100m Ω @ 2.2A, 10V
- Current Continuous Drain Id25
- 3.5A 2.3A
- Radyasyon Dayanımı
- No
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