Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz
- Lead Free
- Genişlik
- 4mm
- Power Dissipation
- 2W
- ECCN Kodu
- EAR99
- Temel Parça No
- IRF9389
- Fet Feature
- Logic Level Gate
- Fall Time Typ
- 15 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Uzunluk
- 5mm
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Max Power Dissipation
- 2W
- Yükseklik
- 1.5mm
- Element Configuration
- Dual
- Fet Type
- N and P-Channel
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 17 ns
- Gate Charge Qg Max Vgs
- 14nC @ 10V
- Drain To Source Breakdown Voltage
- 30V
- Terminal Formu
- GULL WING
- Input Capacitance Ciss Max Vds
- 398pF @ 15V
- Gate To Source Voltage Vgs
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Sayısı
- 8
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Seri
- HEXFET®
- Yayın Yılı
- 2008
- Threshold Voltage
- 1.8V
- Vgsth Max Id
- 2.3V @ 10μA
- Reach Svhc
- No SVHC
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pulsed Drain Currentmax Idm
- 34A
- Continuous Drain Current Id
- 4.6A
- Pin Sayısı
- 8
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Operating Mode
- ENHANCEMENT MODE
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