IRF9389PBF

Specifications

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Montaj

Surface Mount

Rds On Max Id Vgs

27m Ω @ 6.8A, 10V

Current Continuous Drain Id25

6.8A 4.6A

Pulsed Drain Currentmax Idm

34A

Continuous Drain Current Id

4.6A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

6.8A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

14nC @ 10V

Input Capacitance Ciss Max Vds

398pF @ 15V

Terminal Formu

GULL WING

Jesd30 Code

R-PDSO-G8

Terminal Pozisyonu

DUAL

Ambalaj

Tube

Number Of Elements

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Yayın Yılı

2004

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.3V @ 10μA

Transistor Element Material

SILICON

Parça Durumu

Discontinued

Fet Type

N and P-Channel

Montaj Tipi

Surface Mount

Max Power Dissipation

2W

Temel Parça No

IRF9389

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.027Ohm

Jedec95 Code

MS-012AA

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

11 Weeks