Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 4.9784mm
- Avalanche Energy Rating Eas
- 94 mJ
- Yükseklik
- 1.4986mm
- Turn On Delay Time
- 5.2 ns
- Element Configuration
- Dual
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation
- 2W
- Fet Feature
- Logic Level Gate
- Montaj
- Surface Mount
- Rise Time
- 5.9ns
- Pin Sayısı
- 8
- Continuous Drain Current Id
- -8A
- Operating Mode
- ENHANCEMENT MODE
- Drain Currentmax Abs Id
- 8A
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 8
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Input Capacitance Ciss Max Vds
- 1300pF @ 25V
- Terminal Formu
- GULL WING
- Gate To Source Voltage Vgs
- 20V
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Nominal Vgs
- -1.8 V
- Yayın Yılı
- 2004
- Recovery Time
- 48 ns
- Drain To Source Voltage Vdss
- 30V
- Threshold Voltage
- -1.8V
- Transistor Element Material
- SILICON
- Parça Durumu
- Discontinued
- Fet Type
- 2 P-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 2W
- Temel Parça No
- IRF9362PBF
- Kurşunsuz
- Lead Free
- Genişlik
- 3.9878mm
- ECCN Kodu
- EAR99
- Fall Time Typ
- 53 ns
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 21m Ω @ 8A, 10V
- Current Continuous Drain Id25
- 8A
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