Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 P-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 2W
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 12 Weeks
- Fall Time Typ
- 69 ns
- Temel Parça No
- IRF9358PBF
- Genişlik
- 4mm
- Drainsource On Resistancemax
- 0.0163Ohm
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Jedec95 Code
- MS-012AA
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 16.3m Ω @ 9.2A, 10V
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 73A
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
- Seri
- HEXFET®
- Vgsth Max Id
- 2.4V @ 25μA
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge Qg Max Vgs
- 38nC @ 10V
- Turn Off Delay Time
- 146 ns
- Drain To Source Breakdown Voltage
- -30V
- Avalanche Energy Rating Eas
- 210 mJ
- Yükseklik
- 1.5mm
- Element Configuration
- Dual
- Turn On Delay Time
- 5.7 ns
- Uzunluk
- 5mm
- Fet Feature
- Logic Level Gate
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation
- 2W
- Montaj
- Surface Mount
- Rise Time
- 7.2ns
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 9.2A
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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