Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Direnç
- 16.3MOhm
- Drain To Source Breakdown Voltage
- -30V
- Turn Off Delay Time
- 146 ns
- Gate Charge Qg Max Vgs
- 38nC @ 10V
- Ambalaj
- Tube
- Number Of Elements
- 2
- Vgsth Max Id
- 2.4V @ 25μA
- Seri
- HEXFET®
- Rds On Max Id Vgs
- 16.3m Ω @ 9.2A, 10V
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 73A
- Radyasyon Dayanımı
- No
- Temel Parça No
- IRF9358PBF
- ECCN Kodu
- EAR99
- Genişlik
- 4mm
- Kurşunsuz
- Lead Free
- Fall Time Typ
- 69 ns
- Parça Durumu
- Discontinued
- Transistor Element Material
- SILICON
- Montaj Tipi
- Surface Mount
- Fet Type
- 2 P-Channel (Dual)
- Max Power Dissipation
- 2W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 8
- Gate To Source Voltage Vgs
- 20V
- Terminal Formu
- GULL WING
- Input Capacitance Ciss Max Vds
- 1740pF @ 25V
- Terminal Kaplaması
- Matte Tin (Sn)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Reach Svhc
- No SVHC
- Drain To Source Voltage Vdss
- 30V
- Recovery Time
- 83 ns
- Yayın Yılı
- 2004
- Nominal Vgs
- -1.8 V
- Rise Time
- 7.2ns
- Montaj
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
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