Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 4.9784mm
- Parça Durumu
- Active
- Max Power Dissipation
- 2W
- Yükseklik
- 1.4986mm
- Turn On Delay Time
- 6 ns
- Element Configuration
- Dual
- Fet Type
- 2 N-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz
- Lead Free
- Genişlik
- 3.9878mm
- Power Dissipation
- 2W
- ECCN Kodu
- EAR99
- Temel Parça No
- IRF8915PBF
- Fet Feature
- Logic Level Gate
- Fall Time Typ
- 3.6 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 8.9A
- Rise Time
- 12ns
- Montaj
- Surface Mount
- Rds On Max Id Vgs
- 18.3m Ω @ 8.9A, 10V
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 7.1 ns
- Gate Charge Qg Max Vgs
- 7.4nC @ 4.5V
- Input Capacitance Ciss Max Vds
- 540pF @ 10V
- Drain To Source Breakdown Voltage
- 20V
- Gate To Source Voltage Vgs
- 20V
- Direnç
- 18.3MOhm
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Voltage Rated Dc
- 20V
- Seri
- HEXFET®
- Yayın Yılı
- 2008
- Vgsth Max Id
- 2.5V @ 250μA
- Threshold Voltage
- 2.5V
- Akım Değeri
- 8.9A
- Reach Svhc
- No SVHC
- Number Of Elements
- 2
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