Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Feature
- Logic Level Gate
- Fall Time Typ
- 4.1 ns
- Dual Supply Voltage
- 20V
- Fabrika Tedarik Süresi
- 12 Weeks
- Kurşunsuz
- Lead Free
- Genişlik
- 4mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- ECCN Kodu
- EAR99
- Power Dissipation
- 2W
- Temel Parça No
- IRF8910PBF
- Yükseklik
- 1.5mm
- Max Power Dissipation
- 2W
- Element Configuration
- Dual
- Turn On Delay Time
- 6.2 ns
- Fet Type
- 2 N-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Uzunluk
- 5mm
- Parça Durumu
- Active
- Yayın Yılı
- 2008
- Seri
- HEXFET®
- Nominal Vgs
- 2.55 V
- Vgsth Max Id
- 2.55V @ 250μA
- Threshold Voltage
- 2.55V
- Akım Değeri
- 10A
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
- Gate Charge Qg Max Vgs
- 11nC @ 4.5V
- Turn Off Delay Time
- 9.7 ns
- Gate To Source Voltage Vgs
- 20V
- Direnç
- 13.4MOhm
- Drain To Source Breakdown Voltage
- 20V
- Input Capacitance Ciss Max Vds
- 960pF @ 10V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- Voltage Rated Dc
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal
- SMD/SMT
- Radyasyon Dayanımı
- No
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