Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 19 mJ
- Fet Type
- 2 N-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Transistor Element Material
- SILICON
- Yüzey Montaj
- YES
- Parça Durumu
- Discontinued
- Fet Feature
- Logic Level Gate
- Power Max
- 2W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Drainsource On Resistancemax
- 0.0134Ohm
- Jedec95 Code
- MS-012AA
- ECCN Kodu
- EAR99
- Temel Parça No
- IRF8910PBF
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain Currentmax Abs Id
- 10A
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Pulsed Drain Currentmax Idm
- 82A
- Operating Mode
- ENHANCEMENT MODE
- Qualification Status
- Not Qualified
- Ds Breakdown Voltagemin
- 20V
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 10A
- Rds On Max Id Vgs
- 13.4m Ω @ 10A, 10V
- Seri
- HEXFET®
- Yayın Yılı
- 2004
- Drain To Source Voltage Vdss
- 20V
- Vgsth Max Id
- 2.55V @ 250μA
- Jesd30 Code
- R-PDSO-G8
- Number Of Elements
- 2
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 11nC @ 4.5V
- Terminal Formu
- GULL WING
- Input Capacitance Ciss Max Vds
- 960pF @ 10V
- Terminal Sayısı
- 8
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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