Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance
- 960pF
- Current Continuous Drain Id25
- 10A
- Rds On Max Id Vgs
- 13.4mOhm @ 10A, 10V
- Rise Time
- 10ns
- Montaj
- Surface Mount
- Tedarikçi Cihaz Paketi
- 8-SO
- Continuous Drain Current Id
- 10A
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- RoHS Durumu
- RoHS Compliant
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge Qg Max Vgs
- 11nC @ 4.5V
- Turn Off Delay Time
- 9.7 ns
- Input Capacitance Ciss Max Vds
- 960pF @ 10V
- Drain To Source Breakdown Voltage
- 20V
- Gate To Source Voltage Vgs
- 20V
- Ambalaj
- Tube
- Number Of Elements
- 2
- Rds On Max
- 13.4 mΩ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- HEXFET®
- Yayın Yılı
- 2009
- Drain To Source Voltage Vdss
- 20V
- Vgsth Max Id
- 2.55V @ 250μA
- Maks. Çalışma Sıcaklığı
- 150°C
- Parça Durumu
- Obsolete
- Drain To Source Resistance
- 18.3mOhm
- Fet Type
- 2 N-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 2W
- Yükseklik
- 1.4986mm
- Min. Çalışma Sıcaklığı
- -55°C
- Turn On Delay Time
- 6.2 ns
- Element Configuration
- Dual
- Temel Parça No
- IRF8910GPBF
- Genişlik
- 3.9878mm
- Power Dissipation
- 2W
- Power Max
- 2W
- Fet Feature
- Logic Level Gate
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