Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 15.5m Ω @ 9.7A, 10V
- Transistor Application
- SWITCHING
- Vgsth Max Id
- 2.35V @ 25μA
- Seri
- HEXFET®
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 2
- Direnç
- 15.5MOhm
- Drain To Source Breakdown Voltage
- 30V
- Gate Charge Qg Max Vgs
- 9nC @ 4.5V
- Turn Off Delay Time
- 8.5 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Max Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
- Fet Type
- 2 N-Channel (Dual)
- Parça Durumu
- Not For New Designs
- Transistor Element Material
- SILICON
- Fall Time Typ
- 4.2 ns
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Genişlik
- 3.9878mm
- Temel Parça No
- IRF8313PBF
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 9.7A
- Montaj
- Surface Mount
- Rise Time
- 9.9ns
- Threshold Voltage
- 1.8V
- Drain To Source Voltage Vdss
- 30V
- Yayın Yılı
- 2008
- Nominal Vgs
- 1.8 V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 760pF @ 15V
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Matte Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- RoHS Durumu
- ROHS3 Compliant
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