IRF8313PBF

Specifications

Temel Parça No

IRF8313PBF

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ürün Durumu

Obsolete

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0155Ohm

Jedec95 Code

MS-012AA

ECCN Kodu

EAR99

Power Max

2W

Fabrika Tedarik Süresi

6 Weeks

Fet Feature

Logic Level Gate

Power Dissipationmax Abs

2W

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Discontinued

Fet Type

2 N-Channel (Dual)

Avalanche Energy Rating Eas

46 mJ

Montaj Tipi

Surface Mount

Lead Free Status Rohs Status

Lead free / RoHS Compliant

Terminal Sayısı

8

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

90nC @ 4.5V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

760pF @ 15V

Jesd30 Code

R-PDSO-G8

JESD-609 Kodu

e3

Number Of Elements

2

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2004

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.35V @ 25μA

Other Names

SP001570694

Paket

Tube

Ds Breakdown Voltagemin

30V

Qualification Status

Not Qualified

Transistor Application

SWITCHING