Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 10A
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Rise Time
- 22ns
- Rds On Max Id Vgs
- 15m Ω @ 8A, 4.5V
- Transistor Application
- SWITCHING
- Kurşunsuz Kodu
- yes
- Contact Plating
- Tin
- Tepe Reflow Süresi (maks. sn)
- 30
- Radyasyon Dayanımı
- No
- Direnç
- 15MOhm
- Gate To Source Voltage Vgs
- 12V
- Drain To Source Breakdown Voltage
- 12V
- Terminal Formu
- GULL WING
- Input Capacitance Ciss Max Vds
- 1730pF @ 6V
- Turn Off Delay Time
- 16 ns
- Gate Charge Qg Max Vgs
- 26nC @ 4.5V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 8
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- Vgsth Max Id
- 2V @ 250μA
- Yayın Yılı
- 2002
- Seri
- HEXFET®
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Uzunluk
- 4.9784mm
- Parça Durumu
- Not For New Designs
- Transistor Element Material
- SILICON
- Element Configuration
- Single
- Turn On Delay Time
- 9.4 ns
- Yükseklik
- 1.4986mm
- Max Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
- Fet Type
- 2 N-Channel (Dual)
- Jedec95 Code
- MS-012AA
- Power Dissipation
- 2W
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