Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 10A
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Rise Time
- 22ns
- Akım Değeri
- 10A
- Threshold Voltage
- 2V
- Yayın Yılı
- 2004
- Nominal Vgs
- 2 V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 12V
- Input Capacitance Ciss Max Vds
- 1730pF @ 6V
- Terminal Formu
- GULL WING
- Voltage Rated Dc
- 12V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Dual
- Turn On Delay Time
- 9.4 ns
- Yükseklik
- 1.5mm
- Uzunluk
- 5mm
- Fet Feature
- Logic Level Gate
- Dual Supply Voltage
- 12V
- Power Dissipation
- 2W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal
- SMD/SMT
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 15m Ω @ 8A, 4.5V
- Transistor Application
- SWITCHING
- Vgsth Max Id
- 2V @ 250μA
- Seri
- HEXFET®
- Ambalaj
- Tube
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- 12V
- Turn Off Delay Time
- 16 ns
- Gate Charge Qg Max Vgs
- 26nC @ 4.5V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Max Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
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