Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 15 mJ
- Fet Type
- 2 N-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Yükseklik
- 1.4986mm
- Max Power Dissipation
- 2W
- Element Configuration
- Dual
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Uzunluk
- 4.9784mm
- Fabrika Tedarik Süresi
- 12 Weeks
- Fet Feature
- Logic Level Gate
- Temel Parça No
- IRF7907PBF
- Genişlik
- 3.9878mm
- Kurşunsuz
- Lead Free
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- ECCN Kodu
- EAR99
- Power Dissipation
- 2W
- Radyasyon Dayanımı
- No
- Tepe Reflow Süresi (maks. sn)
- 30
- Montaj
- Surface Mount
- Rds On Max Id Vgs
- 16.4m Ω @ 9.1A, 10V
- Current Continuous Drain Id25
- 9.1A 11A
- Continuous Drain Current Id
- 11A
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2008
- Seri
- HEXFET®
- Vgsth Max Id
- 2.35V @ 25μA
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Sayısı
- 8
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge Qg Max Vgs
- 10nC @ 4.5V
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 20V
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