IRF7907PBF

Specifications

Montaj Tipi

Surface Mount

Fet Type

2 N-Channel (Dual)

Avalanche Energy Rating Eas

15 mJ

Yüzey Montaj

YES

Parça Durumu

Discontinued

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

10 Weeks

Power Max

2W

Power Dissipationmax Abs

2W

Fet Feature

Logic Level Gate

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Temel Parça No

IRF7907PBF

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0118Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Drain Currentmax Abs Id

11A

Current Continuous Drain Id25

9.1A 11A

Rds On Max Id Vgs

16.4m Ω @ 9.1A, 10V

Ds Breakdown Voltagemin

30V

Qualification Status

Not Qualified

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

85A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

JESD-609 Kodu

e3

Ambalaj

Tube

Jesd30 Code

R-PDSO-G8

Vgsth Max Id

2.35V @ 25μA

Drain To Source Voltage Vdss

30V

Yayın Yılı

2006

Seri

HEXFET®

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

850pF @ 15V

Gate Charge Qg Max Vgs

10nC @ 4.5V