Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2.25V @ 25μA
- Yayın Yılı
- 2006
- Seri
- HEXFET®
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e3
- Number Of Elements
- 2
- Gate To Source Voltage Vgs
- 20V
- Direnç
- 16.2MOhm
- Input Capacitance Ciss Max Vds
- 910pF @ 15V
- Terminal Formu
- GULL WING
- Drain To Source Breakdown Voltage
- 30V
- Gate Charge Qg Max Vgs
- 11nC @ 4.5V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 8
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- ROHS3 Compliant
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 11A
- Current Continuous Drain Id25
- 7.6A 11A
- Montaj
- Surface Mount
- Rds On Max Id Vgs
- 16.2m Ω @ 7.6A, 10V
- Fet Feature
- Logic Level Gate
- Fabrika Tedarik Süresi
- 12 Weeks
- Power Max
- 1.4W 2W
- ECCN Kodu
- EAR99
- Power Dissipation
- 2W
- Kurşunsuz
- Lead Free
- Genişlik
- 3.9878mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Temel Parça No
- IRF7904PBF
- Element Configuration
- Dual
- Yükseklik
- 1.4986mm
- Max Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
- Fet Type
- 2 N-Channel (Dual)
- Uzunluk
- 4.9784mm
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