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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Temel Parça No
- IRF7756GPBF
- Max Power Dissipation
- 1W
- Vgsth Max Id
- 900mV @ 250μA
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 8
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation
- 1W
- Fet Type
- 2 P-Channel (Dual)
- Parça Durumu
- Obsolete
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- 4.3A
- Gate To Source Voltage Vgs
- 8V
- Gate Charge Qg Max Vgs
- 18nC @ 4.5V
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Yayın Yılı
- 2009
- Montaj
- Surface Mount
- RoHS Durumu
- RoHS Compliant
- Drain To Source Voltage Vdss
- 12V
- ECCN Kodu
- EAR99
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- -12V
- Element Configuration
- Dual
- Seri
- HEXFET®
- Input Capacitance Ciss Max Vds
- 1400pF @ 10V
- Rds On Max Id Vgs
- 40m Ω @ 4.3A, 4.5V
- Kılıf / Paket
- 8-TSSOP (0.173, 4.40mm Width)
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