IRF7750

Specifications

Transistor Application

SWITCHING

Terminal Sayısı

8

Fet Feature

Logic Level Gate

Parça Durumu

Obsolete

Fet Type

2 P-Channel (Dual)

Continuous Drain Current Id

4.7A

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Temel Parça No

IRF7750

Kurşunsuz

Contains Lead

HTS Kodu

8541.29.00.95

Additional Feature

HIGH RELIABILITY

Montaj Tipi

Surface Mount

Vgsth Max Id

1.2V @ 250μA

Qualification Status

Not Qualified

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Max Power Dissipation

1W

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

-20V

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Rds On Max Id Vgs

30m Ω @ 4.7A, 4.5V

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Seri

HEXFET®

Input Capacitance Ciss Max Vds

1700pF @ 15V

Jedec95 Code

MO-153AA

Drainsource On Resistancemax

0.03Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

39nC @ 5V

Akım Değeri

-4.7A

RoHS Durumu

Non-RoHS Compliant

Drain To Source Voltage Vdss

20V

Yayın Yılı

2007

Voltage Rated Dc

-20V

Jesd30 Code

R-PDSO-G8

Terminal Kaplaması

MATTE TIN