Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 33 mJ
- Number Of Elements
- 2
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2004
- Voltage Rated Dc
- 20V
- Montaj
- Surface Mount
- Terminal Kaplaması
- Matte Tin (Sn)
- Turn Off Delay Time
- 36 ns
- Gate Charge Qg Max Vgs
- 26nC @ 4.5V
- Seri
- HEXFET®
- Fabrika Tedarik Süresi
- 12 Weeks
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Fall Time Typ
- 16 ns
- Uzunluk
- 3mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 20V
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 8.5 ns
- Montaj Tipi
- Surface Mount
- Pulsed Drain Currentmax Idm
- 40A
- Genişlik
- 3mm
- Nominal Vgs
- 1.2 V
- Gate To Source Voltage Vgs
- 12V
- Fet Feature
- Standard
- Parça Durumu
- Active
- Fet Type
- 2 N-Channel (Dual)
- Continuous Drain Current Id
- 5.4A
- Terminal Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 5.4A
- Input Capacitance Ciss Max Vds
- 1310pF @ 15V
- Element Configuration
- Dual
- Yükseklik
- 860μm
- Rds On Max Id Vgs
- 30m Ω @ 5.4A, 4.5V
- Threshold Voltage
- 1.2V
- Ambalaj
- Tape & Reel (TR)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
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