IRF7530PBF

Specifications

Yükseklik

910μm

Input Capacitance Ciss Max Vds

1310pF @ 15V

Seri

HEXFET®

Rds On Max Id Vgs

30m Ω @ 5.4A, 4.5V

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

ECCN Kodu

EAR99

Maks. Çalışma Sıcaklığı

150°C

Ambalaj

Tube

Drain To Source Breakdown Voltage

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

16 ns

Uzunluk

3.048mm

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

33 mJ

Number Of Elements

2

Voltage Rated Dc

20V

Yayın Yılı

2004

Montaj

Surface Mount

Akım Değeri

5.4A

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

26nC @ 4.5V

Turn Off Delay Time

36 ns

Drainsource On Resistancemax

0.03Ohm

Rise Time

11ns

Power Dissipation

1.3W

Fet Type

2 N-Channel (Dual)

Parça Durumu

Discontinued

Fet Feature

Standard

Continuous Drain Current Id

5.4A

Min. Çalışma Sıcaklığı

-55°C

Gate To Source Voltage Vgs

12V

Terminal Sayısı

8

Radyasyon Dayanımı

No

Pin Sayısı

8

Max Power Dissipation

1.3W

Vgsth Max Id

1.2V @ 250μA

Turn On Delay Time

8.5 ns

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

40A