IRF7509TRPBF

Specifications

Reach Svhc

No SVHC

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Fabrika Tedarik Süresi

12 Weeks

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

30V

Fall Time Typ

9.3 ns

Uzunluk

3.048mm

Yayın Yılı

1998

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Gate Charge Qg Max Vgs

12nC @ 10V

Turn Off Delay Time

19 ns

Fet Feature

Logic Level Gate

Parça Durumu

Active

Fet Type

N and P-Channel

Continuous Drain Current Id

2.7A

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Terminal Sayısı

8

Current Continuous Drain Id25

2.7A 2A

Montaj Tipi

Surface Mount

Genişlik

3.048mm

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Nominal Vgs

1 V

Rds On Max Id Vgs

110m Ω @ 1.7A, 10V

Threshold Voltage

1V

Element Configuration

Dual

Yükseklik

1.11mm

Input Capacitance Ciss Max Vds

210pF @ 25V

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Akım Değeri

2.7A

Operating Mode

ENHANCEMENT MODE

Max Junction Temperature Tj

150°C

Rise Time

12ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

1.25W