Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Fabrika Tedarik Süresi
- 12 Weeks
- Seri
- HEXFET®
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 30V
- Fall Time Typ
- 9.3 ns
- Uzunluk
- 3.048mm
- Yayın Yılı
- 1998
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 2
- Gate Charge Qg Max Vgs
- 12nC @ 10V
- Turn Off Delay Time
- 19 ns
- Fet Feature
- Logic Level Gate
- Parça Durumu
- Active
- Fet Type
- N and P-Channel
- Continuous Drain Current Id
- 2.7A
- Gate To Source Voltage Vgs
- 20V
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 8
- Current Continuous Drain Id25
- 2.7A 2A
- Montaj Tipi
- Surface Mount
- Genişlik
- 3.048mm
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Nominal Vgs
- 1 V
- Rds On Max Id Vgs
- 110m Ω @ 1.7A, 10V
- Threshold Voltage
- 1V
- Element Configuration
- Dual
- Yükseklik
- 1.11mm
- Input Capacitance Ciss Max Vds
- 210pF @ 25V
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Akım Değeri
- 2.7A
- Operating Mode
- ENHANCEMENT MODE
- Max Junction Temperature Tj
- 150°C
- Rise Time
- 12ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation
- 1.25W
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