Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 4.7 ns
- Montaj Tipi
- Surface Mount
- Pulsed Drain Currentmax Idm
- 14A
- Genişlik
- 3mm
- Nominal Vgs
- 1 V
- Fet Type
- 2 N-Channel (Dual)
- Parça Durumu
- Active
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- 2.4A
- Gate To Source Voltage Vgs
- 20V
- Terminal Sayısı
- 8
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Yayın Yılı
- 1997
- Voltage Rated Dc
- 30V
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Turn Off Delay Time
- 12 ns
- Gate Charge Qg Max Vgs
- 12nC @ 10V
- Seri
- HEXFET®
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Fabrika Tedarik Süresi
- 12 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 30V
- Fall Time Typ
- 5.3 ns
- Uzunluk
- 3mm
- Max Power Dissipation
- 1.25W
- Vgsth Max Id
- 1V @ 250μA
- Additional Feature
- ULTRA LOW RESISTANCE
- Terminal Formu
- GULL WING
- Kurşunsuz
- Lead Free
- Temel Parça No
- IRF7503PBF
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 10ns
- Power Dissipation
- 1.25W
- Radyasyon Dayanımı
- No
- Direnç
- 135mOhm
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