Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 75 mJ
- Number Of Elements
- 2
- Yayın Yılı
- 2008
- Voltage Rated Dc
- 80V
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge Qg Max Vgs
- 23nC @ 10V
- Turn Off Delay Time
- 41 ns
- Seri
- HEXFET®
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fabrika Tedarik Süresi
- 12 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 80V
- Fall Time Typ
- 17 ns
- Uzunluk
- 4.9784mm
- Tepe Reflow Süresi (maks. sn)
- 30
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 9 ns
- Montaj Tipi
- Surface Mount
- Genişlik
- 3.9878mm
- Nominal Vgs
- 4 V
- Parça Durumu
- Active
- Fet Type
- 2 N-Channel (Dual)
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- 3.6A
- Gate To Source Voltage Vgs
- 20V
- Terminal Sayısı
- 8
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 3.6A
- Element Configuration
- Dual
- Yükseklik
- 1.4986mm
- Input Capacitance Ciss Max Vds
- 660pF @ 25V
- Rds On Max Id Vgs
- 73m Ω @ 2.2A, 10V
- Threshold Voltage
- 4V
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Ambalaj
- Tape & Reel (TR)
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