Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 3.9878mm
- Pulsed Drain Currentmax Idm
- 46A
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Vgsth Max Id
- 1V @ 250μA
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Max Power Dissipation
- 2.5W
- Kurşunsuz
- Lead Free
- Temel Parça No
- IRF7379PBF
- Terminal Formu
- GULL WING
- Terminal Pozisyonu
- DUAL
- Gate To Source Voltage Vgs
- 20V
- Continuous Drain Current Id
- 5.8A
- Parça Durumu
- Not For New Designs
- Fet Type
- N and P-Channel
- Fet Feature
- Standard
- Power Dissipation
- 2.5W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Current Continuous Drain Id25
- 5.8A 4.3A
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 5.8A
- Montaj
- Surface Mount
- Terminal Kaplaması
- Matte Tin (Sn)
- Yayın Yılı
- 2004
- Number Of Elements
- 2
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.045Ohm
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Fabrika Tedarik Süresi
- 12 Weeks
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Rds On Max Id Vgs
- 45m Ω @ 5.8A, 10V
- Input Capacitance Ciss Max Vds
- 520pF @ 25V
- Seri
- HEXFET®
- Yükseklik
- 1.4986mm
- Uzunluk
- 4.9784mm
- Drain To Source Breakdown Voltage
- 30V
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