Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 520pF @ 25V
- Yükseklik
- 1.4986mm
- Rds On Max Id Vgs
- 45m Ω @ 5.8A, 10V
- Threshold Voltage
- 1V
- Ambalaj
- Tube
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 5.8A
- Rise Time
- 17ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Dual Supply Voltage
- 30V
- Power Dissipation
- 2.5W
- Radyasyon Dayanımı
- No
- Terminal
- SMD/SMT
- Pin Sayısı
- 8
- Vgsth Max Id
- 1V @ 250μA
- Max Power Dissipation
- 2.5W
- Additional Feature
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Terminal Formu
- GULL WING
- Kurşunsuz
- Lead Free
- Temel Parça No
- IRF7379PBF
- Seri
- HEXFET®
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time Typ
- 18 ns
- Uzunluk
- 4.9784mm
- Drain To Source Breakdown Voltage
- 30V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- RoHS Durumu
- RoHS Compliant
- Yayın Yılı
- 2004
- Montaj
- Surface Mount
- Turn Off Delay Time
- 25 ns
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Drainsource On Resistancemax
- 0.045Ohm
- Row Spacing
- 6.3 mm
- Gate To Source Voltage Vgs
- 20V
- Fet Feature
- Standard
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