Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn Off Delay Time
- 17 ns
- Gate Charge Qg Max Vgs
- 36nC @ 10V
- Number Of Elements
- 2
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 60V
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj
- Surface Mount
- Yayın Yılı
- 2009
- Ambalaj
- Tape & Reel (TR)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Uzunluk
- 4.9784mm
- Fall Time Typ
- 6.7 ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 60V
- Seri
- HEXFET®
- Input Capacitance Ciss Max Vds
- 1330pF @ 30V
- Yükseklik
- 1.4986mm
- Element Configuration
- Dual
- Fabrika Tedarik Süresi
- 12 Weeks
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Rds On Max Id Vgs
- 17.8m Ω @ 8A, 10V
- Temel Parça No
- IRF7351PBF
- Kurşunsuz
- Lead Free
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 5.1 ns
- Vgsth Max Id
- 4V @ 50μA
- JESD-609 Kodu
- e3
- Max Power Dissipation
- 2W
- Genişlik
- 3.9878mm
- Montaj Tipi
- Surface Mount
- Pulsed Drain Currentmax Idm
- 64A
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 8
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Power Dissipation
- 2W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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