Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 1.5mm
- Input Capacitance Ciss Max Vds
- 380pF @ 25V
- Seri
- HEXFET®
- Threshold Voltage
- 4V
- Rds On Max Id Vgs
- 210mOhm @ 2.1A, 10V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Maks. Çalışma Sıcaklığı
- 150°C
- Ambalaj
- Tube
- Drain To Source Breakdown Voltage
- 100V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 40 ns
- Uzunluk
- 5mm
- Number Of Elements
- 2
- Yayın Yılı
- 2004
- Montaj
- Surface Mount
- Akım Değeri
- 2.1A
- RoHS Durumu
- RoHS Compliant
- Drain To Source Voltage Vdss
- 100V
- Gate Charge Qg Max Vgs
- 28nC @ 10V
- Turn Off Delay Time
- 30 ns
- Input Capacitance
- 380pF
- Tedarikçi Cihaz Paketi
- 8-SO
- Power Max
- 2W
- Dual Supply Voltage
- 100V
- Rise Time
- 13ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation
- 2W
- Fet Type
- N and P-Channel
- Parça Durumu
- Obsolete
- Fet Feature
- Standard
- Continuous Drain Current Id
- 2.1A
- Min. Çalışma Sıcaklığı
- -55°C
- Gate To Source Voltage Vgs
- 20V
- Rds On Max
- 210 mΩ
- Current Continuous Drain Id25
- 2.1A 1.5A
- Terminal
- SMD/SMT
- Direnç
- 210mOhm
- Pin Sayısı
- 8
- Drain To Source Resistance
- 480mOhm
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