Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 36nC @ 10V
- Drain To Source Voltage Vdss
- 55V
- RoHS Durumu
- RoHS Compliant
- Montaj
- Surface Mount
- Yayın Yılı
- 2010
- Number Of Elements
- 2
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 4.9784mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Maks. Çalışma Sıcaklığı
- 150°C
- Ambalaj
- Cut Tape (CT)
- ECCN Kodu
- EAR99
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Rds On Max Id Vgs
- 50m Ω @ 4.7A, 10V
- Input Capacitance Ciss Max Vds
- 740pF @ 25V
- Seri
- HEXFET®
- Yükseklik
- 1.4986mm
- Temel Parça No
- IRF7343QPBF
- Genişlik
- 3.9878mm
- Montaj Tipi
- Surface Mount
- Vgsth Max Id
- 1V @ 250μA
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Max Power Dissipation
- 2W
- Pin Sayısı
- 8
- Current Continuous Drain Id25
- 4.7A 3.4A
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 20V
- Min. Çalışma Sıcaklığı
- -55°C
- Continuous Drain Current Id
- 4.7A
- Fet Type
- N and P-Channel
- Parça Durumu
- Obsolete
- Fet Feature
- Standard
- Power Dissipation
- 2W
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