IRF7343PBF

Specifications

Drainsource On Resistancemax

0.05Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

36nC @ 10V

Drain To Source Voltage Vdss

55V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2004

Jesd30 Code

R-PDSO-G8

Terminal Kaplaması

Matte Tin (Sn)

Number Of Elements

2

Avalanche Energy Rating Eas

72 mJ

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

14 Weeks

Rds On Max Id Vgs

50m Ω @ 4.7A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Seri

HEXFET®

Input Capacitance Ciss Max Vds

740pF @ 25V

Jedec95 Code

MS-012AA

Terminal Formu

GULL WING

Temel Parça No

IRF7343PBF

Terminal Pozisyonu

DUAL

Power Dissipationmax Abs

2W

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

38A

Yüzey Montaj

YES

Vgsth Max Id

1V @ 250μA

Qualification Status

Not Qualified

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Transistor Application

SWITCHING

Current Continuous Drain Id25

4.7A 3.4A

Ds Breakdown Voltagemin

55V

Terminal Sayısı

8