Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 4.9784mm
- Fall Time Typ
- 22 ns
- Drain To Source Breakdown Voltage
- -55V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 12 Weeks
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Reach Svhc
- No SVHC
- Seri
- HEXFET®
- Row Spacing
- 6.3 mm
- Turn Off Delay Time
- 43 ns
- Gate Charge Qg Max Vgs
- 38nC @ 10V
- Drain To Source Voltage Vdss
- 55V
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
- Voltage Rated Dc
- -55V
- Yayın Yılı
- 1999
- Avalanche Energy Rating Eas
- 114 mJ
- Number Of Elements
- 2
- Recovery Time
- 80 ns
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 3.4A
- Terminal Sayısı
- 8
- Gate To Source Voltage Vgs
- 20V
- Continuous Drain Current Id
- -3.4A
- Fet Type
- 2 P-Channel (Dual)
- Parça Durumu
- Active
- Fet Feature
- Logic Level Gate
- Nominal Vgs
- -1 V
- Genişlik
- 3.9878mm
- Montaj Tipi
- Surface Mount
- Turn On Delay Time
- 14 ns
- Ambalaj
- Tape & Reel (TR)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Rds On Max Id Vgs
- 105m Ω @ 3.4A, 10V
- Threshold Voltage
- -1V
- Input Capacitance Ciss Max Vds
- 690pF @ 25V
- Yükseklik
- 1.75mm
- Element Configuration
- Dual
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