IRF7342TRPBF

Specifications

Uzunluk

4.9784mm

Fall Time Typ

22 ns

Drain To Source Breakdown Voltage

-55V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC

Seri

HEXFET®

Row Spacing

6.3 mm

Turn Off Delay Time

43 ns

Gate Charge Qg Max Vgs

38nC @ 10V

Drain To Source Voltage Vdss

55V

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Voltage Rated Dc

-55V

Yayın Yılı

1999

Avalanche Energy Rating Eas

114 mJ

Number Of Elements

2

Recovery Time

80 ns

Transistor Application

SWITCHING

Current Continuous Drain Id25

3.4A

Terminal Sayısı

8

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

-3.4A

Fet Type

2 P-Channel (Dual)

Parça Durumu

Active

Fet Feature

Logic Level Gate

Nominal Vgs

-1 V

Genişlik

3.9878mm

Montaj Tipi

Surface Mount

Turn On Delay Time

14 ns

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Rds On Max Id Vgs

105m Ω @ 3.4A, 10V

Threshold Voltage

-1V

Input Capacitance Ciss Max Vds

690pF @ 25V

Yükseklik

1.75mm

Element Configuration

Dual