IRF7342PBF

Specifications

Current Continuous Drain Id25

3.4A

Ds Breakdown Voltagemin

55V

Terminal Sayısı

8

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Max

2W

Drain Currentmax Abs Id

3.4A

Fet Feature

Logic Level Gate

Parça Durumu

Discontinued

Fet Type

2 P-Channel (Dual)

Power Dissipationmax Abs

2W

Terminal Formu

GULL WING

Temel Parça No

IRF7342PBF

Vgsth Max Id

1V @ 250μA

Qualification Status

Not Qualified

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Additional Feature

HIGH RELIABILITY

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

27A

Yüzey Montaj

YES

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

690pF @ 25V

Seri

HEXFET®

Jedec95 Code

MS-012AA

Fabrika Tedarik Süresi

39 Weeks

Rds On Max Id Vgs

105m Ω @ 3.4A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate Charge Qg Max Vgs

38nC @ 10V

Drainsource On Resistancemax

0.105Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number Of Elements

2

Avalanche Energy Rating Eas

114 mJ

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

55V