Volume pricing
- 1+ pcs$0.85
- 10+ pcs$0.80
- 100+ pcs$0.75
- 500+ pcs$0.71
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- 4.7A
- Operating Mode
- ENHANCEMENT MODE
- Contact Plating
- Tin
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Threshold Voltage
- 1V
- Rds On Max Id Vgs
- 50m Ω @ 4.7A, 10V
- Element Configuration
- Dual
- Yükseklik
- 1.75mm
- Input Capacitance Ciss Max Vds
- 740pF @ 25V
- Terminal Formu
- GULL WING
- Kurşunsuz
- Contains Lead, Lead Free
- Temel Parça No
- IRF7341PBF
- Number Of Channels
- 2
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Max Power Dissipation
- 2W
- Tepe Reflow Sıcaklığı (°C)
- 260
- Vgsth Max Id
- 1V @ 250μA
- Direnç
- 50mOhm
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Max Junction Temperature Tj
- 150°C
- Drain Currentmax Abs Id
- 5.1A
- Dual Supply Voltage
- 55V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 3.2ns
- Power Dissipation
- 2W
- Row Spacing
- 6.3 mm
- Turn Off Delay Time
- 32 ns
- Gate Charge Qg Max Vgs
- 36nC @ 10V
- Voltage Rated Dc
- 55V
- Yayın Yılı
- 2004
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 2
- Avalanche Energy Rating Eas
- 140 mJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 55V
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