IRF7341TRPBF

Specifications

Akım Değeri

4.7A

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Threshold Voltage

1V

Rds On Max Id Vgs

50m Ω @ 4.7A, 10V

Element Configuration

Dual

Yükseklik

1.75mm

Input Capacitance Ciss Max Vds

740pF @ 25V

Terminal Formu

GULL WING

Kurşunsuz

Contains Lead, Lead Free

Temel Parça No

IRF7341PBF

Number Of Channels

2

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Max Power Dissipation

2W

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

1V @ 250μA

Direnç

50mOhm

Pin Sayısı

8

Radyasyon Dayanımı

No

Max Junction Temperature Tj

150°C

Drain Currentmax Abs Id

5.1A

Dual Supply Voltage

55V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

3.2ns

Power Dissipation

2W

Row Spacing

6.3 mm

Turn Off Delay Time

32 ns

Gate Charge Qg Max Vgs

36nC @ 10V

Voltage Rated Dc

55V

Yayın Yılı

2004

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Avalanche Energy Rating Eas

140 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Breakdown Voltage

55V