Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ds Breakdown Voltagemin
- 55V
- Terminal Sayısı
- 8
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Power Max
- 2.4W
- Fet Feature
- Standard
- Parça Durumu
- Active
- Fet Type
- 2 N-Channel (Dual)
- Continuous Drain Current Id
- 5.1A
- Terminal Formu
- GULL WING
- Vgsth Max Id
- 1V @ 250μA (Min)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Max Power Dissipation
- 2.4W
- Additional Feature
- ULTRA LOW RESISTANCE
- Montaj Tipi
- Surface Mount
- Pulsed Drain Currentmax Idm
- 42A
- Ambalaj
- Tape & Reel (TR)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Seri
- HEXFET®
- Input Capacitance Ciss Max Vds
- 780pF @ 25V
- Jedec95 Code
- MS-012AA
- Fabrika Tedarik Süresi
- 12 Weeks
- Rds On Max Id Vgs
- 50m Ω @ 5.1A, 10V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge Qg Max Vgs
- 44nC @ 10V
- Drainsource On Resistancemax
- 0.05Ohm
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Number Of Elements
- 2
- Avalanche Energy Rating Eas
- 140 mJ
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 55V
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2005
- Jesd30 Code
- R-PDSO-G8
- Montaj
- Surface Mount
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