Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Surface Mount
- Voltage Rated Dc
- -12V
- Yayın Yılı
- 2004
- Drain To Source Voltage Vdss
- 12V
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- -9.2A
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Drainsource On Resistancemax
- 0.017Ohm
- Turn Off Delay Time
- 340 ns
- Gate Charge Qg Max Vgs
- 57nC @ 4.5V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Rds On Max Id Vgs
- 17m Ω @ 9.2A, 4.5V
- Fabrika Tedarik Süresi
- 12 Weeks
- Yükseklik
- 1.4986mm
- Element Configuration
- Dual
- Input Capacitance Ciss Max Vds
- 3450pF @ 10V
- Seri
- HEXFET®
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- -12V
- Uzunluk
- 4.9784mm
- Fall Time Typ
- 260 ns
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 3.9878mm
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 2W
- Turn On Delay Time
- 10 ns
- Vgsth Max Id
- 900mV @ 250μA
- Temel Parça No
- IRF7329PBF
- Kurşunsuz
- Lead Free
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 9.2A
- Fet Feature
- Logic Level Gate
- Parça Durumu
- Active
- Fet Type
- 2 P-Channel (Dual)
- Gate To Source Voltage Vgs
- 8V
- Power Dissipation
- 2W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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