Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn Off Delay Time
- 170 ns
- Gate Charge Qg Max Vgs
- 63nC @ 5V
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 20V
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj
- Surface Mount
- Voltage Rated Dc
- -20V
- Yayın Yılı
- 2004
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 30
- Uzunluk
- 4.9784mm
- Fall Time Typ
- 190 ns
- Drain To Source Breakdown Voltage
- -20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 12 Weeks
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Reach Svhc
- No SVHC
- Seri
- HEXFET®
- Genişlik
- 3.9878mm
- Montaj Tipi
- Surface Mount
- Pulsed Drain Currentmax Idm
- 71A
- Turn On Delay Time
- 17 ns
- JESD-609 Kodu
- e3
- Recovery Time
- 270 ns
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 9A
- Terminal Sayısı
- 8
- Gate To Source Voltage Vgs
- 12V
- Continuous Drain Current Id
- -9A
- Fet Type
- 2 P-Channel (Dual)
- Parça Durumu
- Active
- Fet Feature
- Logic Level Gate
- Akım Değeri
- -9A
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Threshold Voltage
- -1V
- Rds On Max Id Vgs
- 18m Ω @ 9A, 4.5V
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