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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 6.5A
- Yükseklik
- 1.4986mm
- Input Capacitance Ciss Max Vds
- 650pF @ 25V
- Rds On Max Id Vgs
- 29m Ω @ 5.8A, 10V
- Threshold Voltage
- 1V
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Contact Plating
- Tin
- Max Power Dissipation
- 2W
- Vgsth Max Id
- 1V @ 250μA
- Additional Feature
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Terminal Formu
- GULL WING
- Temel Parça No
- IRF7319PBF
- Kurşunsuz
- Contains Lead, Lead Free
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 13ns
- Power Dissipation
- 2W
- Radyasyon Dayanımı
- No
- Direnç
- 29mOhm
- Pin Sayısı
- 8
- Number Of Elements
- 2
- Yayın Yılı
- 1997
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Turn Off Delay Time
- 34 ns
- Gate Charge Qg Max Vgs
- 33nC @ 10V
- Row Spacing
- 6.3 mm
- Seri
- HEXFET®
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fabrika Tedarik Süresi
- 12 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 30V
- Fall Time Typ
- 32 ns
- Uzunluk
- 4.9784mm
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Montaj Tipi
- Surface Mount
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