IRF7316PBF

Specifications

Drainsource On Resistancemax

0.058Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

34nC @ 10V

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

30V

Yayın Yılı

2004

Terminal Kaplaması

Matte Tin (Sn)

Jesd30 Code

R-PDSO-G8

Avalanche Energy Rating Eas

140 mJ

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Rds On Max Id Vgs

58m Ω @ 4.9A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

710pF @ 25V

Seri

HEXFET®

Jedec95 Code

MS-012AA

Terminal Formu

GULL WING

Temel Parça No

IRF7316PBF

Power Dissipationmax Abs

2W

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Yüzey Montaj

YES

Pulsed Drain Currentmax Idm

30A

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e3

Qualification Status

Not Qualified

Vgsth Max Id

1V @ 250μA

Transistor Application

SWITCHING

Current Continuous Drain Id25

4.9A

Ds Breakdown Voltagemin

30V

Terminal Sayısı

8

Drain Currentmax Abs Id

4.9A

Fet Feature

Logic Level Gate

Fet Type

2 P-Channel (Dual)