IRF7314PBF

Specifications

Terminal Sayısı

8

Ds Breakdown Voltagemin

20V

Current Continuous Drain Id25

5.3A

Transistor Application

SWITCHING

Power Max

2W

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

2 P-Channel (Dual)

Parça Durumu

Discontinued

Fet Feature

Logic Level Gate

Drain Currentmax Abs Id

5.3A

Power Dissipationmax Abs

1.4W

Temel Parça No

IRF7314PBF

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e3

Qualification Status

Not Qualified

Vgsth Max Id

700mV @ 250μA

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

21A

Yüzey Montaj

YES

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

MS-012AA

Input Capacitance Ciss Max Vds

780pF @ 15V

Seri

HEXFET®

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

58m Ω @ 2.9A, 4.5V

Fabrika Tedarik Süresi

39 Weeks

Gate Charge Qg Max Vgs

29nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.058Ohm

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

150 mJ

Number Of Elements

2

Terminal Kaplaması

Matte Tin (Sn)