Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- JESD-609 Kodu
- e3
- Genişlik
- 4.05mm
- Pulsed Drain Currentmax Idm
- 16A
- Montaj Tipi
- Surface Mount
- Nominal Vgs
- 1 V
- Terminal Pozisyonu
- DUAL
- Continuous Drain Current Id
- 4A
- Fet Type
- N and P-Channel
- Parça Durumu
- Active
- Fet Feature
- Standard
- Gate To Source Voltage Vgs
- 20V
- Terminal Sayısı
- 8
- Current Continuous Drain Id25
- 4A 3A
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Montaj
- Surface Mount
- Yayın Yılı
- 2001
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge Qg Max Vgs
- 25nC @ 4.5V
- Turn Off Delay Time
- 25 ns
- Row Spacing
- 6.3 mm
- Seri
- HEXFET®
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 12 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain To Source Breakdown Voltage
- 30V
- Uzunluk
- 4.9784mm
- Max Power Dissipation
- 1.4W
- Vgsth Max Id
- 1V @ 250μA
- Additional Feature
- ULTRA LOW RESISTANCE
- Kurşunsuz
- Lead Free
- Temel Parça No
- IRF7309PBF
- Terminal Formu
- GULL WING
- Power Dissipation
- 1.4W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain Currentmax Abs Id
- 4A
- Radyasyon Dayanımı
- No
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